🛠 Tech Stack

💼 About This Role

You'll serve as a senior technical contributor developing vertical GaN power devices for next-generation compute and AI, driving device architecture and process integration. Your impact will directly shape product performance and scalability at a pivotal startup stage. This role offers hands-on leadership in a venture-backed MIT spin-out.

🎯 What You'll Do

• Define device architectures and performance targets for vertical GaN power devices.
• Drive TCAD simulation and analytical modeling for design optimization.
• Plan and execute device development programs in shared fabs and foundries.
• Lead failure analysis and reliability physics investigations.

📋 Requirements

• PhD in Electrical Engineering, Physics, or Materials Science.
• 15–25 years of semiconductor device R&D experience.
• Deep expertise in GaN or SiC power devices.
• Proficiency in TCAD simulation and data analysis (Python/MATLAB).

✨ Nice to Have

• Experience with CMOS-compatible GaN process integration.
• Knowledge of GDS layout and test structure design.
• Startup experience in power electronics.

🎁 Benefits & Perks

• 💰 Competitive salary
• 📈 Stock option program
• 🏖️ Comprehensive benefits package

📨 Hiring Process

Estimated timeline: 2-4 weeks · AI estimate

1. 1Recruiter Screen· 30 min
2. 2Technical Interview· 60 min
3. 3Onsite Meeting· 2 hours