💼 About This Role

You'll support research and analysis of advanced CMOS transistor behavior, focusing on channel materials and HKMG stacks. Your work will synthesize academic literature to guide device development. This role offers deep exposure to semiconductor R&D.

🎯 What You'll Do

• Conduct structured review of academic journals on advanced CMOS devices
• Analyze channel material properties impact on device performance
• Study interfacial layer scaling and HKMG stack effects
• Integrate findings across layers and document in reusable format

📋 Requirements

• Pursuing PhD in Electrical Engineering, Materials Science, or related field
• Strong foundation in semiconductor physics and device engineering
• Ability to analyze and synthesize complex technical literature
• Strong written communication skills in English

✨ Nice to Have

• Background in CMOS device physics or gate stack engineering
• Familiarity with high-k dielectrics or metal gate work function engineering
• Prior research experience in device, materials, or process technology

🎁 Benefits & Perks

• 🔬 Hands-on experience with state-of-the-art device technologies
• 🤝 Close interaction with experienced engineers and researchers
• 📚 Deep exposure to device physics and gate stack engineering challenges
• 📈 Experience translating academic research into industrial R&D insights

📨 Hiring Process

Estimated timeline: 2-4 weeks · AI estimate

1. 1Recruiter Screen· 30 min
2. 2Technical Interview· 60 min
3. 3Offer· 15 min